SKU:29133952505
Ge Wafer (110) Ga-doped, 2" dia x 0.5 mm, 1SP Resistivity : 1-10 ohm-cm
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- CAN
Ships within 48 hours · Estimated delivery Jul 13 - Jul 18
Description
Ge Wafer (110) Ga-doped, 2" dia x 0.5 mm, 1SP Resistivity : 1-10 ohm-cmGe Wafer Specification Growing Method: CZ Orientation: (110) + _0. 5 Deg. Wafer Size: 2" dia x 500 microns Surface Polishing: one side optical polished Surface finish (RMS or Ra) : < 30A Doping: Ga doped Conductor type: P type Resistivity: 1 10 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a
and operates inside a glovebox with Ar gas
94mm Flatness = 0
Wafer size: 2" dia x 0
8 mm) Tube Length 700 mm
Working Temperature: < 50°C
white and green
Doping: Undoped
Flats: SEMI PF <01-1>
Blade Diameter 4"
This extension is required for the following applications:
Air Permeability 310 +/- 50 s / 100 ml
5(Male) adaptor
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