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SKU:43701236492
Ge Wafer ,N-type Undoped (100) 3" dia x 0.5 mm 2 side polished resistivity: >50 ohm-cm
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Ships within 48 hours · Estimated delivery Jul 13 - Jul 18
Description
Ge Wafer ,N-type Undoped (100) 3" dia x 0.5 mm 2 side polished resistivity: >50 ohm-cmGe Wafer Specification Growing Method: CZ Orientation: (100) + _0. 5 Deg. Wafer Size: 3" dia x 0. 5 mm Surface Polishing: two sides optical polished Surface finish (RMS or Ra) : < 30A Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other
The layers are stacked together via van der Waals interactions
Coulombic efficiency
Composition: Fe2O3 ceramic
OVERALL TRAY SIZE Size = 50
Surface roughness: <30 A ( by AFM)
Non-Flammable
It is an ideal tool for applications where a dry and oil-free vacuum is required
155 MPa Material Stainless Steel 316
52- 56 x103
This wafer container is designed for 2
temperature resolution is ±3
Pressure (kg/cm2)
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