SKU:27434499953
GaAs, Growing Method: VGF(100) Si doped, N-type, 4" dia x 0.625mm, 2sp, Carrier Concentration: (1.47-3.78) x 10^18 /cm^3 - GASia100D06C2US5
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Ships within 48 hours · Estimated delivery Jul 13 - Jul 18
Description
GaAs, Growing Method: VGF(100) Si doped, N-type, 4" dia x 0.625mm, 2sp, Carrier Concentration: (1.47-3.78) x 10^18 /cm^3 - GASia100D06C2US5GaAs single crystal wafer Growing Method: VGF Orientation: (100) Size: 4" dia x 0. 625 mm Polishing: two sides polished Doping: Si doped Conductor type: S C N Carrier Concentration: (1. 47 3. 78) x 10^18 cm^3 Mobility: (1600 2130) cm^2 V. S Resistivity: (1. 03 2. 01) E 3 ohm. cm EPD: < 5000cm^2 Ra(Average Roughness) : < 0. 4 nm EPI ready surface and packing Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces
Mobility: (3450-4150) cm^2/V
combination of grinding jar and milling ball
One die kit container
Specific Capacity: 280±30mAh/g
Front surface finish: Epi-polished
Size: 20 mesh
Standard materials include Brass
16 pins electrical feed through inside the glove box
Purity:99%
2mm CIP35D900 1 3/8" (35mm ±0
It is designed for the production of the world’s high-class battery manufacturer (NiMH
The DNP aluminum laminated film (91 um) is used as a casing material for the polymer Li-Ion battery
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