SKU:26668754433
GaAs VGF Grown(110) orientation, un-doped, Semi-Insulating, 3" dia x 0.5mm, 1sp
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- USA
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- USA
- CAN
Ships within 48 hours · Estimated delivery Jul 13 - Jul 18
Description
GaAs VGF Grown(110) orientation, un-doped, Semi-Insulating, 3" dia x 0.5mm, 1spGaAs single crystal wafer Growing Method: VGF Orientation: (110) Primary Flat: EJ(1 10) + 0. 5 degree Secondary Flat: EJ (001) + 0. 5 degree Size: 3" dia x 0. 5mm Polishing: One side polished Doping: Un doped, Semi Insulating Conductor type: S I Carrier Concentration: N A Mobility: 4570 6190cm^2 V. S Resistivity : (0. 89 3. 8)x10^8ohm. cm EPI ready surface and packing Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP
Power Consumption <50 W
The compaction desnity is 4
Film: Ge epi-film
It includes all necessary diamond accessories and lets you work immediately
Whole set pressing die includes One 20 mm I
Polishing: One side polished
2 side polished
Cutting thickness 0
CR2025 & CR2032 coin cells included
Net weight: 5 kg
Conductor type: N-type
Stainless Steel Jar can be perfectly matched with the MSK-SFM-14 for crushing
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